J.D. Cressler and G.F. Niu, Silicon-Germanium Heterojunction Bipolar Transistors, Artech House, January 2003 (589 pages).
G.F. Niu, “Enablement and Optimization of SiGe HBTs for Extreme Environment Electronics,” ECS Transactions, vol. 33, pp. 287-299, 2010. Invited.
L. Luo, G. Niu, K. Meon, J. Cressler, “Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K,” IEEE Trans. Electron Devices, vol. 56, no. 10, pp. 2169-2177, Oct 2009.
G.F. Niu, “Noise in SiGe HBT RF Technology: Physics, Modeling and Circuit Implications,” Proceedings of the IEEE, Special Issue on SiGe Technology, pp. 1583 - 1597, Sep 2005 (Invited).
K. Xia, G. Niu, “Discussions and extension of van Vliet’s noise model for high speed bipolar transistors,” Solid-State Electronics, vol. 53, no. 3, pp. 349-354, March 2009.
G. Niu, J.D. Cressler, W.E. Ansley*, C. Webster, and D.L. Harame, “A unified approach to RF and microwave noise parameter modeling in bipolar transistors,” IEEE Transactions on Electron Devices, vol. 48, no. 11, pp. 2568-2574, November 2001.
G. Niu, S. Zhang*, J.D. Cressler, A. Joseph, J. Fairbanks, L. Larson, C. Webster, D.L. Harame, “Noise parameter modeling and SiGe profile design trade-offs for RF applications,” IEEE Transactions on Electron Devices, vol. 37, no. 11, pp. 2037-2044, November 2000.
G. Niu, Q.Q. Liang*, J.D. Cressler, C.S. Webster, and D.L. Harame, “RF linearity characteristics of SiGe HBTs,” IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 9, pp. 1558-1565, September, 2001.
X. Wei, G. Niu, Y. Li, M.T. Yang, S. Taylor, “Modeling and characterization of intermodulation linearity on a 90nm RF CMOS technology,” IEEE Trans. Microwave Theory and Techniques, vol. 57, no. 4, pp. 965-971, April 2009.
X. Wei*, G. Niu, S. Sweeney, Q. Liang, X. Wang, S. Taylor, “A General 4-Port Solution for 110 GHz On-Wafer Transistor Measurements With or Without Impedance Standard Substrate (ISS) Calibration,” IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2706-2714, Oct 2007.
X. Wei, G. Niu, Y. Li, M.T. Yang, S. Taylor, “Modeling and characterization of intermodulation linearity on a 90nm RF CMOS technology,” IEEE Trans. Microwave Theory and Techniques, vol. 57, no. 4, pp. 965-971, April 2009. Also listed in measurement section.
Yan Cui*, G. Niu, and Stewart S. Taylor, “Modeling of Anomalous Frequency and Bias Dependence of Effective Gate Resistance in RF CMOS,” IEEE Transactions on Electron Devices, vol. 53, no. 10, pp. 2620-2626, Oct. 2006.
Y. Cui, G. Niu, Y. Shi, C. Zhu, J. Cressler, A. Joseph, “SiGe Profile Optimization for Improved Cryogenic Operation at High Injection,’’ Tech Digest of IEEE BCTM, pp. 1-4, Oct 2006.
Y. Shi* and G. Niu, “Vertical Profile Design and Transit Time Analysis of Nano-Scale SiGe HBTs for Terahertz fT,” Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 213–216, Montreal Canada, Sept. 13th-14th, 2004.
Y. Shi*, G. Niu, and J.D. Cressler, ``On the modeling of BGN for consistent device simulation of highly scaled SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 50, no. 5, pp. 1370-1377, May 2003.
K.J. Chen and G. Niu, “Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices,” IEEE Journal of Solid-State Circuits, vol. 38, no. 2, pp. 312-318, February 2003.
H. Yang*, G.F. Niu, P. Zampardi, and R. Welser, “Impact of burn-in effect and base strain on low frequency noise in InGaAsN HBTs,” Proc. of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 220-223, Oct. 2005.