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Publications
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Recent Papers
===============
#. `List of recent publications at Researchgate. <https://www.researchgate.net/scientific-contributions/Guofu-Niu-7849906>`_ Not complete but good enough to give prospective students a good idea of my activities.
#. `Google Scholar List. <https://scholar.google.com/citations?user=91ifsCcAAAAJ&hl=en>`_
Books
===============
* J.D. Cressler and G.F. Niu,
*Silicon-Germanium Heterojunction Bipolar Transistors*,
Artech House, January 2003 (589 pages).
`Amazon link. <http://www.amazon.com/Silicon-Germanium-Heterojunction-Bipolar-Transistors-Cressler/product-reviews/1580533612/ref=dp_top_cm_cr_acr_txt?ie=UTF8&showViewpoints=1>`_
Older Papers
================
Extreme Environment
--------------------
#. G.F. Niu,
"Enablement and Optimization of SiGe HBTs for Extreme Environment Electronics,"
*ECS Transactions*, vol. 33, pp. 287-299, 2010. *Invited*.
#. L. Luo, G. Niu, K. Meon, J. Cressler, "Compact Modeling of the
Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to
30 K," *IEEE Trans. Electron Devices*, vol. 56, no. 10, pp.
2169-2177, Oct 2009.
Download__
__ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5232850&contentType=Journals+%26+Magazines&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A5247140%29
Noise
---------
#. G.F. Niu,
"Noise in SiGe HBT RF Technology: Physics,
Modeling and Circuit Implications,"
*Proceedings of the IEEE*, Special Issue on
SiGe Technology,
pp. 1583 - 1597, Sep 2005 (*Invited*).
Download__
__ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=1495907&contentType=Journals+%26+Magazines&searchField%3DSearch_All%26queryText%3DNoise+in+SiGe+HBT+RF+Technology%3A+Physics
#. K. Xia, G. Niu, "Discussions and extension of van Vliet's noise model
for high speed bipolar transistors," *Solid-State Electronics*, vol. 53,
no. 3, pp. 349-354, March 2009.
#. G. Niu, J.D. Cressler, W.E. Ansley\*, C. Webster, and D.L. Harame, "A
unified approach to RF and microwave noise parameter modeling in
bipolar transistors," *IEEE Transactions on Electron Devices*, vol.
48, no. 11, pp. 2568-2574, November 2001.
Download__
__ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=960384&contentType=Journals+%26+Magazines&searchField%3DSearch_All%26queryText%3DA+unified+approach+to+RF+and+microwave+noise+parameter+modeling
#. G. Niu, S. Zhang\*, J.D. Cressler, A. Joseph, J. Fairbanks, L.
Larson, C. Webster, D.L. Harame, "Noise parameter modeling and SiGe
profile design trade-offs for RF applications," *IEEE Transactions on
Electron Devices*, vol. 37, no. 11, pp. 2037-2044, November 2000.
Download__
__ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=877164
Linearity
------------
#. G. Niu, Q.Q. Liang\*, J.D. Cressler, C.S. Webster, and D.L. Harame,
"RF linearity characteristics of SiGe HBTs," *IEEE Transactions on
Microwave Theory and Techniques*, vol. 49, no. 9, pp. 1558-1565,
September, 2001.
Download__
__ http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=942567
#. X. Wei, G. Niu, Y. Li, M.T. Yang, S. Taylor, "Modeling and
characterization of intermodulation linearity on a 90nm RF CMOS
technology," *IEEE Trans. Microwave Theory and Techniques*, vol. 57,
no. 4, pp. 965-971, April 2009.
Download__
__ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4799235
On-chip RF Measurement Techniques
------------------------------------
#. X. Wei\*, G. Niu, S. Sweeney, Q. Liang, X. Wang, S. Taylor, "A
General 4-Port Solution for 110 GHz On-Wafer Transistor Measurements
With or Without Impedance Standard Substrate (ISS) Calibration,"
*IEEE Trans. Electron Devices*, vol. 54, no. 10, pp. 2706-2714, Oct
2007.
Download__
__ http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4317757
Radiation Effects
----------------------
#. X. Wei, T. Zhang, G. Niu, M. Varadharajaperumal, J. D. Cressler, and
P. W. Marshall, "3-D Mixed Mode Simulation of Single Event Transients
in SiGe HBT Emitter Followers and Hardening Guidelines," *IEEE Trans.
on Nuclear Science*, vol. 55, no. 6, pp. 3360-3366, Dec. 2008.
#. M. Varadharajaperumal\*, G. Niu, R. Krithivasan\*, J. D. Cressler, R.
A. Reed, P. W. Marshall, G. Vizkelethy, P. E. Dodd, and A. J. Joseph,
"3-D Simulation of Heavy-Ion Induced Charge Collection in SiGe HBTs,"
*IEEE Transactions on Nuclear Science*, vol.?50, no.?5,
pp. 2191-2198, December 2003.
#. G. Niu, R. Krithivasan\*, J.D. Cressler, P.A. Riggs, B.A. Randall, P.
Marshall, R. Reed, B. Gilbert, "A comparison of SEU tolerance in
high-speed SiGe HBT digital logic designed with multiple circuit
architectures," *IEEE Transactions on Nuclear Science*, vol. 49, no.
6, pp. 3107-3114, December 2002.
RF CMOS
-------------
#. X. Wei, G. Niu, Y. Li, M.T. Yang, S. Taylor, "Modeling and
characterization of intermodulation linearity on a 90nm RF CMOS
technology," *IEEE Trans. Microwave Theory and Techniques*, vol. 57,
no. 4, pp. 965-971, April 2009. Also listed in measurement section.
Download__
__ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4799235
#. Yan Cui\*, G. Niu, and Stewart S. Taylor, "Modeling of Anomalous
Frequency and Bias Dependence of Effective Gate Resistance in RF
CMOS," *IEEE Transactions on Electron Devices*, vol. 53, no. 10,
pp. 2620-2626, Oct. 2006.
Device Design Using TCAD
--------------------------------
#. Y. Cui, G. Niu, Y. Shi, C. Zhu, J. Cressler, A. Joseph,
"SiGe Profile Optimization for Improved Cryogenic Operation at High Injection,''
*Tech Digest of IEEE BCTM*, pp. 1-4, Oct 2006.
Download__
__ http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4100211
#. Y. Shi* and G. Niu,
"Vertical Profile Design and Transit Time Analysis of Nano-Scale SiGe HBTs
for Terahertz fT," *Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)*,
pp. 213--216, Montreal Canada, Sept. 13th-14th, 2004.
Download__
__ http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1365783
#. Y. Shi\*, G. Niu, and J.D. Cressler, \`\`On the modeling of BGN for
consistent device simulation of highly scaled SiGe HBTs," *IEEE
Transactions on Electron Devices*, vol. 50, no. 5, pp. 1370-1377, May
2003.
III-V Heterostructure Devices and Circuits
----------------------------------------------
#. K.J. Chen and G. Niu, "Logic synthesis and circuit modeling of a
programmable logic gate based on controlled quenching of
series-connected negative differential resistance devices," *IEEE
Journal of Solid-State Circuits*, vol. 38, no. 2, pp. 312-318,
February 2003.
Download__
__ http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1175512
#. H. Yang*, G.F. Niu, P. Zampardi, and R. Welser,
"Impact of burn-in effect and base strain on low frequency noise in InGaAsN HBTs,"
*Proc. of IEEE Bipolar/BiCMOS Circuits and Technology Meeting*, pp. 220-223, Oct. 2005.