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5	Future AMNSTC
6	Clean Room and Supporting Facilities
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8	AMNSTC Micro/Nano Fabrication Facilities 4,500 square feet of class 100 and class 1000 laboratory space Karl Suss MA6 double-sided mask aligner STS ASE 100 Bosch DRIE STS AOE Etch System CHA Mark 50C Ebeam/Sputter Denton Discovery 18 Sputter System CVC 601 sputtering system with RGA
9	AMNSTC Packaging Facilities 8500 square feet MPM AP stencil printer Siemens Siplace 80F5 Assembler Karl Suss Model 4000 flip chip bonder SEC model 4150 split-optic bonder Heller 1800 EXL reflow conveyer oven DIMA reflow conveyor oven
10	AMNSTC’s Tools for Nanotechnology Field Emission SEM JEOL JSM 7000 Thermal Schottky Emitter Secondary e^- Spectrometer Energy Dispersive Spectrometer Electron Backscattered Diffraction E-Beam Lithography
11	E-Beam Lithography (Raith)
12	AMNSTC’s Tools for Nanotechnology JEOL 2010 200 kV Transmission Electron Microscope
13	AMNSTC’s Tools for Nanotechnology Scanning Probe Microscope JEOL JSPM 5200 AFM STM MFM Environmental Chamber
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16	Dual Beam Focused Ion Beam System (Proposal for NSF MRI)
17	Focused Ion Beam
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19	AMNSTC, Auburn University
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21	Atomically Engineered SiGe Device Silicon-germanium (SiGe) technology provides the focus for a broad range of state-of-the-art research by Professor Niu including radiation effects in SiGe & CMOS devices, germanium profile optimization in SiGe HBTs, low temperature device operation, and device reliability.
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23	AMNSTC NEMS/MEMS Fabrication Facilities With funding from an NSF grant and internal Auburn grants, the microelectronics laboratory of AMSTC has added two STS reactive ion etching systems (one for Advanced Oxide Etching and the second for Advanced Silicon (and SiC) Etching), a double-sided mask aligner (MA-6), and a metal deposition system with an ion gun, sputtering target and two e-guns (CHA MARK 50).
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27	MEMS Technology for RF Communications
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