10. Class Final Project and Exam

10.1. Final Exam

The class final exam will be open book, open notes, open computer, and open Internet. The problems will mainly come from our notes and homework assignments. For instance, you may be asked to explain how halo doping affects the threshold voltage versus gate length curve, or how threshold voltage choice affects the Ion and Ioff of a MOS transistor, or how multiple cores help with performance/power tradeoff.

10.2. Final Project

You need to do some literature search and find a topic in the general area of semiconductor devices, including, but not limited to, physics, modeling, fabrication, measurement or simulation of either field-effect or heterojunction bipolar transistors.

Your project should not be just about literature survey, and should have a practice component. It can be either Sentaurus TCAD simulation, or experimental measurement, or both.

You could also choose to expand your mid term project on scaled CMOS physics and characterization, and address several additional requirements.

Below are a few “new” topics we have touched on recently you may consider:

  1. Quantum Effect on CMOS Performance. You can simulate CMOS performance with and without quantum effects, analyze simulations details to support your observations, as we have done throughout the semester.

    There are multiple options for simulating quantum effects. Look for QuantumPotential and Density Gradient in the sdevice user manual.

  2. FinFET or Tri-gate CMOS. There are some examples in the Application Library folder under the installation directory. You may choose to use 2-D double-gate MOSFET for simplicity.

  3. Nano wire MOSFETs. I had sent you a couple of links earlier by email.

  4. Low-frequency Noise Measurement. This can be done with a time domain sampling measurement with a semiconductor parameter analyzer.

  5. Temperature dependence of CMOS transistors. In my lab we can take on-wafer measurements from -10C to 140C.

You need to let me know your topic of choice and discuss with me your written project plan by Friday the 18th, 3:00pm. It can be just a short list of simulation or measurement. I will give you feedback.

10.3. Written Report

Your final report is due 3:00pm, Dec 2nd. Please take into account my feedback to you on the mid term report in writing your final report.

Please use IEEE Transactions on Electron Device paper format. Your report should be no longer than 10 pages.

Your Sentaurus simulation files should also be submitted, with a readme file that explains how your files should be run.

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