Device MOSFET { Electrode { { Name="gate" Voltage=0.0 } { Name="base" Voltage=0.0 } { Name="source" Voltage=0.0 } { Name="drain" Voltage=0.0 } } File { Grid = "mosfet_msh.tdr" Current = "mosfet_des.plt" Plot = "mosfet_des.tdr" Param = "pn1d" } Physics { Temperature=300 Mobility( DopingDependence) EffectiveIntrinsicDensity(oldSlotboom ) Recombination(SRH) } Plot { eDensity hDensity eCurrent hCurrent ElectricField eQuasiFermi hQuasiFermi Potential Doping SpaceCharge DonorConcentration AcceptorConcentration ValenceBandEnergy ConductionBandEnergy } } Math { Extrapolate RelErrControl Notdamped=50 Iterations=20 } File { Output = "splitcv_des.log" ACExtract = "splitcv_ac_des.plt" Plot = "splitcv_des.plt" } System { MOSFET MOSFET1 (gate=1 base=2 source=3 drain=3) Vsource_pset vp (1 0) {dc=0} Vsource_pset vn (2 0) {dc=0} Vsource_pset vsd (3 0) {dc=0} } Solve { Poisson Coupled { Poisson Electron Hole } Quasistationary ( InitialStep=0.1 Maxstep=0.2 Minstep=1e-5 increment=1 Goal {Parameter=vp.dc voltage=-10} ) { Coupled { Poisson Electron Hole } } Quasistationary ( InitialStep=0.01 MaxStep=0.01 Minstep=1.e-5 increment=1 Goal { Parameter=vp.dc Voltage=3.0 } Plot{ Range=(0 1) Intervals=20 } ) { ACCoupled ( StartFrequency=1e6 EndFrequency=1e6 NumberOfPoints=1 Decade Node(1 2 3) Exclude(vp vn vsd) ) { Poisson Electron Hole} } }