.. Guofu Niu web site master file, created by sphinx-quickstart on Wed May 18 20:42:10 2011. You can adapt this file completely to your liking, but it should at least contain the root `toctree` directive. ====================================================== Publications ====================================================== Books =============== * J.D. Cressler and G.F. Niu, *Silicon-Germanium Heterojunction Bipolar Transistors*, Artech House, January 2003 (589 pages). `Amazon link. `_ Selected Papers ================ Extreme Environment -------------------- #. G.F. Niu, "Enablement and Optimization of SiGe HBTs for Extreme Environment Electronics," *ECS Transactions*, vol. 33, pp. 287-299, 2010. *Invited*. #. L. Luo, G. Niu, K. Meon, J. Cressler, "Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K," *IEEE Trans. Electron Devices*, vol. 56, no. 10, pp. 2169-2177, Oct 2009. Download__ __ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5232850&contentType=Journals+%26+Magazines&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A5247140%29 Noise --------- #. G.F. Niu, "Noise in SiGe HBT RF Technology: Physics, Modeling and Circuit Implications," *Proceedings of the IEEE*, Special Issue on SiGe Technology, pp. 1583 - 1597, Sep 2005 (*Invited*). Download__ __ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=1495907&contentType=Journals+%26+Magazines&searchField%3DSearch_All%26queryText%3DNoise+in+SiGe+HBT+RF+Technology%3A+Physics #. K. Xia, G. Niu, "Discussions and extension of van Vliet's noise model for high speed bipolar transistors," *Solid-State Electronics*, vol. 53, no. 3, pp. 349-354, March 2009. #. G. Niu, J.D. Cressler, W.E. Ansley\*, C. Webster, and D.L. Harame, "A unified approach to RF and microwave noise parameter modeling in bipolar transistors," *IEEE Transactions on Electron Devices*, vol. 48, no. 11, pp. 2568-2574, November 2001. Download__ __ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=960384&contentType=Journals+%26+Magazines&searchField%3DSearch_All%26queryText%3DA+unified+approach+to+RF+and+microwave+noise+parameter+modeling #. G. Niu, S. Zhang\*, J.D. Cressler, A. Joseph, J. Fairbanks, L. Larson, C. Webster, D.L. Harame, "Noise parameter modeling and SiGe profile design trade-offs for RF applications," *IEEE Transactions on Electron Devices*, vol. 37, no. 11, pp. 2037-2044, November 2000. Download__ __ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=877164 Linearity ------------ #. G. Niu, Q.Q. Liang\*, J.D. Cressler, C.S. Webster, and D.L. Harame, "RF linearity characteristics of SiGe HBTs," *IEEE Transactions on Microwave Theory and Techniques*, vol. 49, no. 9, pp. 1558-1565, September, 2001. Download__ __ http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=942567 #. X. Wei, G. Niu, Y. Li, M.T. Yang, S. Taylor, "Modeling and characterization of intermodulation linearity on a 90nm RF CMOS technology," *IEEE Trans. Microwave Theory and Techniques*, vol. 57, no. 4, pp. 965-971, April 2009. Download__ __ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4799235 On-chip RF Measurement Techniques ------------------------------------ #. X. Wei\*, G. Niu, S. Sweeney, Q. Liang, X. Wang, S. Taylor, "A General 4-Port Solution for 110 GHz On-Wafer Transistor Measurements With or Without Impedance Standard Substrate (ISS) Calibration," *IEEE Trans. Electron Devices*, vol. 54, no. 10, pp. 2706-2714, Oct 2007. Download__ __ http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4317757 Radiation Effects ---------------------- #. X. Wei, T. Zhang, G. Niu, M. Varadharajaperumal, J. D. Cressler, and P. W. Marshall, "3-D Mixed Mode Simulation of Single Event Transients in SiGe HBT Emitter Followers and Hardening Guidelines," *IEEE Trans. on Nuclear Science*, vol. 55, no. 6, pp. 3360-3366, Dec. 2008. #. M. Varadharajaperumal\*, G. Niu, R. Krithivasan\*, J. D. Cressler, R. A. Reed, P. W. Marshall, G. Vizkelethy, P. E. Dodd, and A. J. Joseph, "3-D Simulation of Heavy-Ion Induced Charge Collection in SiGe HBTs," *IEEE Transactions on Nuclear Science*, vol.?50, no.?5, pp. 2191-2198, December 2003. #. G. Niu, R. Krithivasan\*, J.D. Cressler, P.A. Riggs, B.A. Randall, P. Marshall, R. Reed, B. Gilbert, "A comparison of SEU tolerance in high-speed SiGe HBT digital logic designed with multiple circuit architectures," *IEEE Transactions on Nuclear Science*, vol. 49, no. 6, pp. 3107-3114, December 2002. RF CMOS ------------- #. X. Wei, G. Niu, Y. Li, M.T. Yang, S. Taylor, "Modeling and characterization of intermodulation linearity on a 90nm RF CMOS technology," *IEEE Trans. Microwave Theory and Techniques*, vol. 57, no. 4, pp. 965-971, April 2009. Also listed in measurement section. Download__ __ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4799235 #. Yan Cui\*, G. Niu, and Stewart S. Taylor, "Modeling of Anomalous Frequency and Bias Dependence of Effective Gate Resistance in RF CMOS," *IEEE Transactions on Electron Devices*, vol. 53, no. 10, pp. 2620-2626, Oct. 2006. Device Design Using TCAD -------------------------------- #. Y. Cui, G. Niu, Y. Shi, C. Zhu, J. Cressler, A. Joseph, "SiGe Profile Optimization for Improved Cryogenic Operation at High Injection,'' *Tech Digest of IEEE BCTM*, pp. 1-4, Oct 2006. Download__ __ http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4100211 #. Y. Shi* and G. Niu, "Vertical Profile Design and Transit Time Analysis of Nano-Scale SiGe HBTs for Terahertz fT," *Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)*, pp. 213--216, Montreal Canada, Sept. 13th-14th, 2004. Download__ __ http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1365783 #. Y. Shi\*, G. Niu, and J.D. Cressler, \`\`On the modeling of BGN for consistent device simulation of highly scaled SiGe HBTs," *IEEE Transactions on Electron Devices*, vol. 50, no. 5, pp. 1370-1377, May 2003. III-V Heterostructure Devices and Circuits ---------------------------------------------- #. K.J. Chen and G. Niu, "Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices," *IEEE Journal of Solid-State Circuits*, vol. 38, no. 2, pp. 312-318, February 2003. Download__ __ http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1175512 #. H. Yang*, G.F. Niu, P. Zampardi, and R. Welser, "Impact of burn-in effect and base strain on low frequency noise in InGaAsN HBTs," *Proc. of IEEE Bipolar/BiCMOS Circuits and Technology Meeting*, pp. 220-223, Oct. 2005.