Guofu Niu was born in Henan, China, in December of 1971. He received the B.S., M.S., and Ph.D. degrees in Electrical Engineering, all from Fudan University, Shanghai, China, in 1992, 1994, and 1997, respectively. His graduate work at Fudan included developing numerical simulators and compact models for SiGe HBTs and FETs, Monte Carlo simulation of transport properties in a 2-D electron gas, SOI devices, and statistical circuit simulation. From 1995 to 1997, he worked on parallel computing, switched-current oscillator design, and RTD-based quantum effect circuits as a research assistant at City University of Hong Kong. From 1997 to 2000, he conducted post-doctoral research on SiGe HBT, SiGe MOSFETs, radiation effects, low-temperature electronics, and SiC devices at Auburn University. In 2000, he became a faculty member at Auburn, and is currently Associate Professor of Electrical and Computer Engineering. His present research activities include SiGe devices and circuits, RF design, noise, linearity, single-event effects, SiC power devices, and TCAD.

Dr Niu has published over 80 papers related to his research, and has served as a reviewer for many technical journals including: IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEEE Transactions on Microwave Theory and Techniques, IEEE Microwave and Guided Wave Letters, and IEEE Transactions on Nuclear Science. He has served on the program committee of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, IEEE Nuclear and Space Radiation Effects Conferences (NSREC), IEEE Hong Kong Electron Devices and Solid-State Circuits Conference, and IEEE Asia-South-Pacific Design Automation Conference.

Dr Niu received the T.D. Lee Physics Award in 1992 and 1994, and a best student paper award at the International Application Specific Integrated Circuits Conference in 1994. He is listed in Who's Who in America, and is a senior member of the IEEE.