Biograph Sketch

Guofu Niu was born in Henan, China, in December of 1971. He received the B.S., M.S., and Ph.D. degrees in Electrical Engineering, all from Fudan University, Shanghai, China, in 1992, 1994, and 1997, respectively. His graduate work at Fudan included developing numerical simulators and compact models for SiGe HBTs and FETs, Monte Carlo simulation of transport properties in a 2-D electron gas, SOI devices, and statistical circuit simulation. From 1995 to 1997, he worked on parallel computing, switched-current oscillator design, and RTD-based quantum effect circuits as a research assistant at City University of Hong Kong. From 1997 to 2000, he conducted post-doctoral research on SiGe HBT, SiGe MOSFETs, radiation effects, low-temperature electronics, and SiC devices at Auburn University. In 2000, he became a faculty member at Auburn, and is currently Professor of Electrical and Computer Engineering. His present research activities include SiGe devices, RF CMOS, RF and Microwave on-chip transistor measurements, nuclear and space radiation effects, power devices, and TCAD.

Dr Niu has published over 200 papers related to his research, and has served as a reviewer for many technical journals including: IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEEE Transactions on Microwave Theory and Techniques, IEEE Microwave and Guided Wave Letters, and IEEE Transactions on Nuclear Science. He has served on the program committee of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (Chair of Device Physics, 2003-2004), IEEE Nuclear and Space Radiation Effects Conferences (Devices and IC chair, 2003), IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). He was technical program chair of SiRF in 2007 and general chair in 2009.