Course E. Electron Field Emitters: Theories, Characterization and Applications.

 

            RJN - Robert J. Nemanich North Carolina State University

            JLD - Jim L. Davidson, Vanderbilt University

            WPK – Weng Poo Kang, Vanderbilt

 

I.  Theories and Characterization                                              (RJN)

Introduction

            Applications motivation: flat panel display, microwave cathodes, other cathodes

            Carbon Materials – diamond, CVD diamond, DLC, nanocrystalline diamond, graphite, nanotubes.

Electron Affinity and Work Function of Carbon Materials

            Definitions and surface dipole

            Measurement

                        UPS, SEE, Kelvin Probe etc.

            Controlling electron affinity

                        Surface adsorbates and overlayers

            Other wide band gap materials

Schottky Barriers and Band Bending

            Schottky barriers and surface preparation

            Surface Fermi level and band bending

Electron emission fundamentals

            Thermionic emission

                        Space charge limited current

            Field Emission

                        Fowler Nordheim analysis

            Thermionic Field emission

            Field enhancement (vs. NEA emission)

            Triple junction effects

Measurement of field emission from flat surfaces

            Moving and fixed anode (threshold field)

            Transparent Cathode (emitting site density)

            FEEM and PEEM

            Issues: field application, damage, shorts and other artifacts

Review of results of field emission

            p-type diamond, N-doped diamond

            Defective diamond

            DLC

            Needles and flat surfaces

            Nanocrystalline diamond

            Nanotubes

            Other wide band gap materials


II.      Examples of Fabricated Structures, Device Concepts and Applications         (JLD)

         Introduction

         Device Configurations

                  Tipped cathodes/vertical emitters

                           Metal, Si, other

                  Lateral Devices

         Nanotube Emitters

         Stochastic vs. Lithographic

         Gated Microstructures/Displays

         Applications (besides displays)

                  Operating triode (transistor)

                  MEMS / conventional (pressure, accel., etc.)

                  MEMS / EM

                  Electric/ion propulsion (space)

                  Power Diode

                  Solar Conversion

                  Other

III.         Developing a Field Emission Device – A Case Study                (WPK)

         Background

         Material Selection

         Process Approaches

         Process Iterations

         Third Terminal (Gate) Derivation

         Parametric Effects

         Electronic Performance

         Specific and Generic Issues for FEDs