The Influence of Substrate Bias and Argon Flow on The Properties of Amorphous Diamond Deposited by Cathodic Arc

 

Wen Ting Yeh1, Sea-Fue Wang2, James Sung1

 

1.            Kinik Company, and National Taipei University, Taipei, Taiwan, R.O.C.

2.            National Taipei University, Taipei, Taiwan, R.O.C.

 

Abstract

 

          Amorphous diamond can be conveniently deposited by cathodic arc.  The arc contains vaporized carbon ions that are driven toward the substrate by a negative bias.  Amorphous diamond is made of tightly packed carbon atoms jointed together by distorted graphitic (sp2) bonds, or diamond-like (sp3) bonds.  The sp3/sp2 bond ratio is dependent on the kinetic energy of carbon ions.  This kinetic energy can be increased by the bias of substrate.  However, with increasing of argon gas pressure, the mean free path of carbon ions reduces, so is their kinetic energy.  Hence it is expected that sp3/sp2 bond ratio  to increase with the increasing bias, but it may decrease with increasing rate of argon flow.

           Amorphous diamond films were deposited onto cemented tungsten carbide (K10) substrates for 1 hour at two bias levels (-15 and –20 V) with two rates of argon (16 and 125 SCCM).  The thickness of these films was estimated by examining SEM micrographs of cross sections.  The measured values ranged from 0.65 to 1.25 microns.  It was found that the thickness of amorphous diamond tended to surge with the small increase of bias, possibly due to the increase of the flux speed of carbon ions.  However, when the rate of argon flow increased, the deposition rate also gained slightly. 

The hardness of amorphous diamond was determined by Vickers scale to range from 2484 to 3457 Kg/mm2.  It did not vary much with the small change of bias.  However, with the increasing rate of argon flow, the carbon ions lost some kinetics energy, hence the hardness reduced.  The adherence of amorphous diamond was tested by observing compressional spauling of films under the load (150 Kg) of a Rockwell indenter.  It would appear that the adherence was greatly strengthened by increasing the rate of argon flow.  This increase is likely due to the rise of sp3/sp2 bond ratio, and hence the reduction of compressional stress that is the driving force for delaminating the amorphous diamond film from the substrate.