Electrical properties of boron-doped diamond films grown
by bias method.
University of Electric-Communications
1-5-1,Chofugaoka,Chfu-shi,Tokyo
,Japan
(e-mail;yugo@diamond.crc.uec.ac.jp)
(Keywords; doped diamond films, bias method, electrical
properties)
The new method using the bias was proposed as a method for doping
the impurity to the diamond. Boron
dope diamond film was produced in order to evaluate the effectiveness of this
method, and the electrical characteristic was examined. This new doping method is based on the principle
which applies the negative bias in the diamond CVD equipment in installed
electrode for the impurity. The electrode
for the impurity with the negative bias supplies the impurity in the plasma
by ion-sputtering. It is possible
to promote diamond growth with the positive bias by the electron shower.
As the result, various impurity addition are enabled, while the diamond
thin film is kept high-quality. The
boron-dope diamond film was produced by this method, and the electrical properties
were examined. First, by usual bias
processing method, the diamond film for the insulation was produced on n-Si,
and the boron-dope diamond film was produced on the substrate. In the impurity source, Ti-B composite with
the electrical conductivity was used, and the bias voltage changed from 0
to 300V. As the result, the good boron-doped
diamond film was obtained. The electrical
resistivity were about 10-2 Ω -cm,
and the Hall mobility were about 200-1000 cm2/v.s., p-type were recobnized from Hall effect and
Zeebeck effect. The activation energy
of the boron was about 0.3eV. It is
shown that the mobility of doped diamond films by this method are very high,
and that the method of this impurity addition is effective for controlling
electrical characteristic by the bias voltage.
(Abstract1,ADC2001)